Semiconductor Device Physics
Under high temperature stress conditions, the breakage of atomic bonds may become the primary cause for macroscopic power device malfunction.
Mechanical Characterization of Materials
The mechanical behavior of modern and future power semiconductor devices is increasingly determining functionality and reliability.
Degradation Analysis & Prevention
Analysis and understanding of device degradation enables us to continuously improve the robustness of semiconductor power devices.
Modeling & Simulation
Finite Element Method is widely used in several engineering disciplines because of the tremendous increase in computer power.
Degradation Mechanisms & Lifetime Modeling
Due to the high reliability demands in power semiconductor industry, statistical analysis, modeling and predicting the device lifetime are crucial issues.
Device & System Reliability Test Concepts
Together with our partners we develop advanced methods and equipment for power semiconductor stress testing under application conditions.
Mixed Signal Design
New innovative circuit techniques, circuit concepts and verification methods allow us to continuously improve integrated circuits and robustness.
KAI was founded by Infineon Technologies Austria AG in 2006 as industrial competence center, conducting public-funded research projects together with academic and industrial partners.
We are constantly looking for talented people in the areas of semiconductor technology, component and system reliability.
Currently open positions: