The emerging silicon carbide (SIC) MOS Technology by Infineon with its market launch in 2017 poses completely new challenges concerning manufacturing and reliability. The ECS2 project supports Infineon in introducing new manufacturing processes, and simultaneously in understanding the degradation behavior of SiC devices.
Silicon carbide is known as a chemically inert material. However, material processing is possible using anodic polarization with simultaneous illumination. The combination of advanced photo-electrochemical methods with highly surface sensitive analytical methods helps to clarify reaction mechanisms and find process parameters.
The ECS2 project is funded by the Austrian Research Promotion Agency (FFG). By granting funds to a selection of innovative PhD-proposals, the FFG encourages additional cooperation between industrial research and universities in Austria.