The emerging silicon carbide (SIC) MOS Technology by Infineon with its market launch in 2017 poses completely new challenges concerning manufacturing and reliability. The ECS² project supports Infineon in introducing new manufacturing processes, and simultaneously in understanding the degradation behavior of SiC devices.

Silicon carbide is known as a chemically inert material. However, material processing is possible using anodic polarization with simultaneous illumination. The combination of advanced photo-electrochemical methods with highly surface sensitive analytical methods helps to clarify reaction mechanisms and find process parameters.

The ECS² project is funded by the Austrian Research Promotion Agency (FFG). By granting funds to a selection of innovative PhD-proposals, the FFG encourages additional cooperation between industrial research and universities in Austria.